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1

[IEEE 2016 IEEE 16th International Conference on Advanced Learning Technologies (ICALT) - Austin, TX, USA (2016.7.25-2016.7.28)] 2016 IEEE 16th International Conference on Advanced Learning Technologies (ICALT) - Improvements to a Learning Design: The Combination of Mobile Application for Summary Speaking Task by Self-Study and Pair Work in a Class: The Effectiveness in Scaffolding Tasks and Visualizing Learning Achievement

Nakaya, Kae, Murota, Masao

Year:

2016

Language:

english

File:

PDF, 450 KB

english, 2016

2

Heavy atomic-layer doping of nitrogen in Si1 − xGex film epitaxially grown on Si(100) by ultraclean low-pressure CVD

Tomoyuki Kawashima, Masao Sakuraba, Bernd Tillack, Junichi Murota

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 635 KB

english, 2010

3

Electrical characteristics of thermal CVD B-doped Si films on highly strained Si epitaxially grown on Ge(100) by plasma CVD without substrate heating

Katsutoshi Sugawara, Masao Sakuraba, Junichi Murota

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 961 KB

english, 2010

4

Heavy B atomic-layer doping in Si epitaxial growth on Si(100) using electron-cyclotron-resonance plasma CVD

Takayuki Nosaka, Masao Sakuraba, Bernd Tillack, Junichi Murota

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 459 KB

english, 2010

5

Heavy carbon atomic-layer doping at Si1 − xGex/Si heterointerface

Tomoya Hirano, Masao Sakuraba, Bernd Tillack, Junichi Murota

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 846 KB

english, 2010

6

Impact of Si cap layer growth on surface segregation of P incorporated by atomic layer doping

Yohei Chiba, Masao Sakuraba, Bernd Tillack, Junichi Murota

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 514 KB

english, 2010

7

Linear-time approximation algorithms for finding the minimum-weight perfect matching on a plane

Masao Iri, Kazuo Murota, Shouichi Matsui

Journal:

Information Processing Letters

Year:

1981

Language:

english

File:

PDF, 574 KB

english, 1981

8

Behavior of N atoms after thermal nitridation of Si1 − xGex surface

Tomoyuki Kawashima, Masao Sakuraba, Bernd Tillack, Junichi Murota

Journal:

Thin Solid Films

Year:

2012

Language:

english

File:

PDF, 653 KB

english, 2012

9

Epitaxial growth of B-doped Si on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition in a SiH4–B2H6–H2 gas mixture without substrate heating

Abe, Yusuke, Sakuraba, Masao, Murota, Junichi

Journal:

Thin Solid Films

Year:

2014

Language:

english

File:

PDF, 934 KB

english, 2014

10

Epitaxial growth of Si1−xGex alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating

Ueno, Naofumi, Sakuraba, Masao, Murota, Junichi, Sato, Shigeo

Journal:

Thin Solid Films

Year:

2014

Language:

english

File:

PDF, 871 KB

english, 2014

11

Nitrogen doping effect upon hole tunneling characteristics of Si barriers in Si1-xGex/Si resonant tunneling diode

Kawashima, Tomoyuki, Sakuraba, Masao, Murota, Junichi

Journal:

Thin Solid Films

Year:

2014

Language:

english

File:

PDF, 667 KB

english, 2014

12

[IEEE 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Xian, China (2012.10.29-2012.11.1)] 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology - Atomically controlled CVD technology of group IV semiconductors for ultralarge scale integration

Murota, Junichi, Sakuraba, Masao, Tillack, Bernd

Year:

2012

Language:

english

File:

PDF, 460 KB

english, 2012

13

C and Si delta doping in Ge by CH3SiH3 using reduced pressure chemical vapor deposition

Yamamoto, Yuji, Ueno, Naofumi, Sakuraba, Masao, Murota, Junichi, Mai, Andreas, Tillack, Bernd

Journal:

Thin Solid Films

Year:

2016

Language:

english

File:

PDF, 862 KB

english, 2016

14

Possibilities and limitations of integrating peer instruction into technical creativity education

Wang, Shijuan, Murota, Masao

Journal:

Instructional Science

Year:

2016

Language:

english

File:

PDF, 1.34 MB

english, 2016

15

Replaying a learner's temporal sequence of instruction on Web-based learning system

Masahito Ohkawa, Masao Murota, Minoru Nakayama, Yasutaka Shimizu

Journal:

Electronics and Communications in Japan (Part III: Fundamental Electronic Science))

Year:

2003

Language:

english

File:

PDF, 4.28 MB

english, 2003

16

High-performance pMOSFETs with high Ge fraction strained SiGe-heterostructure channel and ultrashallow source/drain formed by selective B-doped SiGe CVD

Shinobu Takehiro, Masao Sakuraba, Junichi Murota, Toshiaki Tsuchiya

Journal:

Electrical Engineering in Japan

Year:

2008

Language:

english

File:

PDF, 903 KB

english, 2008

17

Video urodynamics using transrectal ultrasonography for lower urinary tract symptoms in women

Akira Tosaka, Akiko Murota-Kawano, Masao Ando

Journal:

Neurourology and Urodynamics

Year:

2003

Language:

english

File:

PDF, 289 KB

english, 2003

18

Heuristics for planar minimum-weight perfect metchings

Masao Iri, Kazuo Murota, Shouichi Matsui

Journal:

Year:

1983

Language:

english

File:

PDF, 856 KB

english, 1983

19

Atomic layer epitaxy of germanium on silicon using flash heating chemical vapor deposition

Masao Sakuraba, Junichi Murota, Nobuo Mikoshiba, Shoichi Ono

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 316 KB

english, 1991

20

Atomic-layer epitaxy control of Ge and Si in flash-heating CVD using GeH4 and SiH4 gases

Masao Sakuraba, Junichi Murota, Takeshi Watanabe, Yasuji Sawada, Shoichi Ono

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 377 KB

english, 1994

21

Formation of heavily P-doped Si epitaxial film on Si(1 0 0) by multiple atomic-layer doping technique

Yosuke Shimamune, Masao Sakuraba, Junichi Murota, Bernd Tillack

Journal:

Applied Surface Science

Year:

2004

Language:

english

File:

PDF, 114 KB

english, 2004

22

Effect of carbon on the thermal stability of a Si atomic layer on Ge(1 0 0)

Masaki Fujiu, Kazuya Takahashi, Masao Sakuraba, Junichi Murota

Journal:

Applied Surface Science

Year:

2004

Language:

english

File:

PDF, 136 KB

english, 2004

23

Fabrication of 0.12 μm pMOSFETs on high Ge fraction Si/Si1−xGex/Si(1 0 0) heterostructure with ultrashallow source/drain formed using B-doped SiGe CVD

Doohwan Lee, Shinobu Takehiro, Masao Sakuraba, Junichi Murota, Toshiaki Tsuchiya

Journal:

Applied Surface Science

Year:

2004

Language:

english

File:

PDF, 312 KB

english, 2004

24

Ar plasma irradiation effects in atomically controlled Si epitaxial growth

Daisuke Muto, Masao Sakuraba, Takuya Seino, Junichi Murota

Journal:

Applied Surface Science

Year:

2004

Language:

english

File:

PDF, 151 KB

english, 2004

25

Electrical properties of N atomic layer doped Si epitaxial films grown by ultraclean low-pressure chemical vapor deposition

Youngcheon Jeong, Masao Sakuraba, Junichi Murota

Journal:

Materials Science in Semiconductor Processing

Year:

2005

Language:

english

File:

PDF, 304 KB

english, 2005

26

Electrical properties of W delta doped Si epitaxial films grown on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition

Takehisa Kurosawa, Tomoyuki Komatsu, Masao Sakuraba, Junichi Murota

Journal:

Materials Science in Semiconductor Processing

Year:

2005

Language:

english

File:

PDF, 311 KB

english, 2005

27

Si epitaxial growth on atomic-order nitrided Si(1 0 0) using electron cyclotron resonance plasma

Masaki Mori, Takuya Seino, Daisuke Muto, Masao Sakuraba, Junichi Murota

Journal:

Materials Science in Semiconductor Processing

Year:

2005

Language:

english

File:

PDF, 210 KB

english, 2005

28

Epitaxial growth of N delta doped Si films on Si(1 0 0) by alternately supplied NH3 and SiH4

Youngcheon Jeong, Masao Sakuraba, Junichi Murota

Journal:

Applied Surface Science

Year:

2004

Language:

english

File:

PDF, 248 KB

english, 2004

29

Relationship between impurity (B or P) and carrier concentration in SiGe(C) epitaxial film produced by thermal treatment

Jintae Noh, Shinobu Takehiro, Masao Sakuraba, Junichi Murota

Journal:

Applied Surface Science

Year:

2004

Language:

english

File:

PDF, 157 KB

english, 2004

30

Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(1 0 0) by ultraclean low-pressure chemical vapor deposition

Hiroki Tanno, Masao Sakuraba, Bernd Tillack, Junichi Murota

Journal:

Applied Surface Science

Year:

2008

Language:

english

File:

PDF, 448 KB

english, 2008

31

Behavior of N atoms in atomic-order nitrided Si0.5Ge0.5(1 0 0)

Nao Akiyama, Masao Sakuraba, Bernd Tillack, Junichi Murota

Journal:

Applied Surface Science

Year:

2008

Language:

english

File:

PDF, 318 KB

english, 2008

32

Self-limited growth of Si on B atomic-layer formed Ge(1 0 0) by ultraclean low-pressure CVD system

Takashi Yokogawa, Kiyohisa Ishibashi, Masao Sakuraba, Junichi Murota, Yasuhiro Inokuchi, Yasuo Kunii, Harushige Kurokawa

Journal:

Applied Surface Science

Year:

2008

Language:

english

File:

PDF, 409 KB

english, 2008

33

Sidewall protection by nitrogen and oxygen in poly-Si1−xGex anisotropic etching using Cl2/N2/O2 plasma

Hang-Sup Cho, Shinobu Takehiro, Masao Sakuraba, Junichi Murota

Journal:

Materials Science in Semiconductor Processing

Year:

2005

Language:

english

File:

PDF, 300 KB

english, 2005

34

Atomically controlled Ge epitaxial growth on Si(1 0 0) in Ar-plasma-enhanced GeH4 reaction

Katsutoshi Sugawara, Masao Sakuraba, Junichi Murota

Journal:

Materials Science in Semiconductor Processing

Year:

2005

Language:

english

File:

PDF, 272 KB

english, 2005

35

Integration of Si p–i–n diodes for light emitter and detector with optical waveguides

Atsushi Yamada, Masao Sakuraba, Junichi Murota

Journal:

Materials Science in Semiconductor Processing

Year:

2005

Language:

english

File:

PDF, 215 KB

english, 2005

36

Heavy B atomic-layer doping characteristics in Si epitaxial growth on B adsorbed Si(1 0 0) by ultraclean low-pressure CVD system

Hiroki Tanno, Masao Sakuraba, Bernd Tillack, Junichi Murota

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 355 KB

english, 2009

37

Improvement in negative differential conductance characteristics of hole resonant-tunneling diodes with high Ge fraction Si/strained Si1−xGex/Si(1 0 0) heterostructure

Takahiro Seo, Kuniaki Takahashi, Masao Sakuraba, Junichi Murota

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 933 KB

english, 2009

38

Fabrication of high-Ge-fraction strained Si1−xGex/Si hole resonant tunneling diode using low-temperature Si2H6 reaction for nanometer-order ultrathin Si barriers

Kuniaki Takahashi, Masao Sakuraba, Junichi Murota

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 658 KB

english, 2011

39

Carbon effect on strain compensation in Si1−x −yGexCy films epitaxially grown on Si(100)

Hiroaki Nitta, Junichi Tanabe, Masao Sakuraba, Junichi Murota

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 234 KB

english, 2006

40

Photo detection characteristics of Si/Si1−xGex/Si p-i-n diodes integrated with optical waveguides

Atsushi Yamada, Masao Sakuraba, Junichi Murota

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 202 KB

english, 2006

41

Surface reaction and B atom segregation in ECR chlorine plasma etching of B-doped Si1−xGex epitaxial films

Hang-Sup Cho, Masao Sakuraba, Junichi Murota

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 172 KB

english, 2006

42

Characterization of hot-carrier degraded SiGe/Si-hetero-PMOSFETs

Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 183 KB

english, 2006

43

Thermal effect on strain relaxation in Ge films epitaxially grown on Si(100) using ECR plasma CVD

Katsutoshi Sugawara, Masao Sakuraba, Junichi Murota

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 436 KB

english, 2006

44

Effect of grain boundary on electrical characteristics in B- and P-doped polycrystalline Si1−x −yGexCy film deposited by ultraclean LPCVD

Hyunyoung Shim, Masao Sakuraba, Junichi Murota

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 147 KB

english, 2006

45

Si epitaxial growth on self-limitedly B adsorbed Si1 − xGex(100) by ultraclean low-pressure CVD system

Kiyohisa Ishibashi, Masao Sakuraba, Junichi Murota, Yasuhiro Inokuchi, Yasuo Kunii, Harushige Kurokawa

Journal:

Thin Solid Films

Year:

2008

Language:

english

File:

PDF, 371 KB

english, 2008

46

Structural change of atomic-order nitride formed on Si1 − xGex(100) and Ge(100) by heat treatment

Nao Akiyama, Masao Sakuraba, Bernd Tillack, Junichi Murota

Journal:

Thin Solid Films

Year:

2008

Language:

english

File:

PDF, 359 KB

english, 2008

47

Very low-temperature epitaxial growth of silicon and germanium using plasma-assisted CVD

Masao Sakuraba, Daisuke Muto, Masaki Mori, Katsutoshi Sugawara, Junichi Murota

Journal:

Thin Solid Films

Year:

2008

Language:

english

File:

PDF, 512 KB

english, 2008

48

Observation of sharp current peaks in resonant tunneling diode with strained Si0.6Ge0.4/Si(1 0 0) grown by low-temperature low-pressure CVD

Ping Han, Masao Sakuraba, Young-Cheon Jeong, Kahlheinz Bock, Takashi Matsuura, Junichi Murota

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 176 KB

english, 2000

49

Drain leakage current and instability of drain current in Si/Si1−xGex MOSFETs

Toshiaki Tsuchiya, Kinya Goto, Masao Sakuraba, Takashi Matsuura, Junichi Murota

Journal:

Thin Solid Films

Year:

2000

Language:

english

File:

PDF, 235 KB

english, 2000

50

Doping and electrical characteristics of in-situ heavily B-doped Si1−x−yGexCy films epitaxially grown using ultraclean LPCVD

Takaaki Noda, Doohwan Lee, Hyunyoung Shim, Masao Sakuraba, Takashi Matsuura, Junichi Murota

Journal:

Thin Solid Films

Year:

2000

Language:

english

File:

PDF, 996 KB

english, 2000